Electron spin resonance (ESR and LESR) studies in a-Si 1-xGe x:H

Abstract

In alloys of gd-a-Si 1-xGe x:H we found evidence for new resonances at g = 2.008 with ΔHpp = 16 G and g = 2.025 with ΔHpp = 50 G. We attribute these lines to localized electrons and holes in deep tail states of the conduction- and valence-band, respectively. These states are introduced by alloying of Ge to Si and we suggest that they arise from weak SiGe bonds.